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Directed Self Assembly
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Developable Bottom Antireflective Coating (DBARC) Technology 12:43
In this video, Dr. Jim Cameron provides an overview of Developable Bottom Antireflective Coating (DBARC) technology and its potential application in semiconductor manufacture. First, DBARC material design principles are reviewed. Second, Dr. Cameron will explain how a DBARC process offers similar control of substrate reflectivity to a conventional BARC without the need for a BARC open etch step. Lastly, Dr. Cameron will highlight how these attributes make a DBARC process attractive for implant lithography where reflectivity control on etch sensitive substrates is a required.
Dr. Jim Cameron, Ph.D.
Dow Fellow
Dow Electronic Materials
Related White Papers
New DSA Research Available Now 1:56
This video offers a brief introduction to recently published white papers on new DSA research. Join Dow authors Pete Trefonas and Phil Hustad as they share a few of the highlights and challenges from this groundbreaking work.
Dr. Pete Trefonas, Ph.D.
Dow Corporate Fellow
Dow Electronic Materials
Dr. Phil Hustad, Ph.D.
DSA Technology Leader and Senior Research Scientist
Dow Electronic Materials
Brushes and Mats to Enable Directed Self Assembly (DSA) Chemoepitaxy 9:24
The leading technique being explored by the industry for directed self assembly is a so-called chemoepitaxy process in which a chemical contrast on a relatively flat substrate is used to align a lamellar block copolymer to form a line space pattern. In this segment, we'll look more in depth at one of the keys to this chemoepitaxy process, the neutral brush or mat. These surface treatment techniques provide control over block copolymer orientation and are a key enabler of these DSA processes.
Dr. Phil Hustad, Ph.D.
DSA Technology Leader and Senior Research Scientist
Dow Electronic Materials
Graphoepitaxy with Cylinders 7:46
Although Graphoepitaxy with Cylinders enables use of high chi block copolymers, it is currently less common than chemoepitaxy for line/space patterning. This is in part because of the misconception that feature density is compromised in graphoepitaxy because of the space consumed by the guide structures. In this segment, we discuss some of the keys to enable cylinder graphoepitaxy and demonstrate that 1:1 line space patterns can be achieved.
Dr. Phil Hustad, Ph.D.
DSA Technology Leader and Senior Research Scientist
Dow Electronic Materials
Directed Self Assembly for Advanced Patterning Part 1 5:04
Directed self assembly of block copolymers, or DSA, is an amazing technology with a lot of promise for advanced semiconductor patterning. DSA processes are made possible through the magic of block copolymer self assembly. If designed properly, block copolymers can phase separate into a variety of ordered nanostructures that resemble common lithographic features. This short video will introduce you to block copolymer self assembly and two of the pathways that have been developed to direct them into ordered nanostructures useful for semiconductor patterning.
Dr. Phil Hustad, Ph.D.
DSA Technology Leader and Senior Research Scientist
Dow Electronic Materials
Directed Self Assembly for Advanced Patterning Part 2 6:50
Directed self assembly of block copolymers, or DSA, is an amazing technology with a lot of promise for advanced semiconductor patterning. The leading block copolymer currently used for DSA is PS-PMMA, but it has a relatively weak driving force for self assembly, i.e. a low chi parameter. This short video will describe some of the attractive features and limitations of PS-PMMA and describe some considerations for design of new high-chi block copolymer systems.
Dr. Phil Hustad, Ph.D.
DSA Technology Leader and Senior Research Scientist
Dow Electronic Materials
Related Articles
Critical Dimension Uniformity vs. Sensitivity Tradeoffs in EUV Lithography
8:29
In this video, Dr. James Thackeray discusses contact hole printing in EUV lithography. Specifically, Dr. Thackeray covers the challenges in small contact printing due to the EUV shot noise problem that is associated with making the resists very fast for high volume manufacturing. Dr. Thackeray also discusses the means by which EUV resists are starting to meet these challenges through the use of low diffusion resist, Photo Decomposable Base, (PDB) and etch optimization. Lastly, he will share results of a high performance EUV resist on a high NA NXE3300 Scanner. Through steady improvement of resist, aerial image and source power, EUV contact hole performance will continue to improve.
Dr. Jim Thackeray, Ph.D.
Dow Fellow
Dow Electronic Materials
Extreme Ultraviolet Lithography (EUV) Resist Technology 5:15
This presentation on extreme ultraviolet (EUV) lithography is designed to familiarize lithographic engineers with the challenges in the design of EUV resist materials. Dr. Jim Thackeray discusses a range of topics including the RLS triangle, EUV acid diffusion control, EUV resist reaction mechanism, EUV shot noise, EUV polymer transmittance, Out-of-band radiation, and resist lithographic performance. Dr. Thackeray will illustrate Dow's innovative approaches to EUV and discuss key discoveries such as polymer-bound photoacid generator (PAG) and PAGs that are desensitized to out-of-band radiation.
Dr. Jim Thackeray, Ph.D.
Dow Fellow
Dow Electronic Materials
Related Articles
Developable Bottom Antireflective Coating (DBARC) Technology 12:43
In this video, Dr. Jim Cameron provides an overview of Developable Bottom Antireflective Coating (DBARC) technology and its potential application in semiconductor manufacture. First, DBARC material design principles are reviewed. Second, Dr. Cameron will explain how a DBARC process offers similar control of substrate reflectivity to a conventional BARC without the need for a BARC open etch step. Lastly, Dr. Cameron will highlight how these attributes make a DBARC process attractive for implant lithography where reflectivity control on etch sensitive substrates is a required.
Dr. Jim Cameron, Ph.D.
Dow Fellow
Dow Electronic Materials
Embedded Barrier Layer (EBL) Technology 5:50
This is a presentation about Dow's embedded barrier layer (EBL) technology used in 193 nm immersion lithography. In this presentation, Dr. Deyan Wang illustrates this innovative approach for replacing conventional immersion top coat process and providing the semiconductor industry with a simplified process with reduced material cost and increased throughput. Unique EBL properties such as high receding contact angle, and how advanced EBL materials work for eliminating blob defects are also discussed in this presentation.
Dr. Deyan Wang, Ph.D.
Electronic Materials Exploratory Research
Dow Electronic Materials
Immersion Top Coat using EBL Technology 7:12
In this video, Dr. Deyan Wang discusses immersion top coat using embedded barrier layer (EBL) technology. Different from conventional immersion top coat design, Dow's top coat utilizes an EBL material to form one to two monolayer of a hydrophobic surface for providing superb receding contact angle for fast scan speed while maintaining top coat matrix polymer with an optimum developer dissolution rate. With simply an EBL change, a top coat can evolve to a new generation with a higher receding contact angle and lower hysteresis for faster scan speed and acceleration.
Dr. Deyan Wang, Ph.D.
Electronic Materials Exploratory Research
Dow Electronic Materials
Positive Tone Photoresist 6:20
This presentation offers a short tutorial for lithographic engineers about positive tone chemically amplified photoresists, used in the patterning process of semiconductor manufacturing. In the video, Dr. Xu will describe the positive tone photoresist process as well as the components of the material (photoacid generator (PAG), polymer, base (quencher), surfactant and solvent) along with their functions in the patterning process. The video will also address key parameters that control photoresist performance, including polymer de-protection kinetics, dissolution contrast in developer before and after exposure, molecular diffusion in photoresist films and molecular distribution in the film.
Dr. Cheng Bai Xu, Ph.D.
Global R&D Director, Litho Technologies
Dow Electronic Materials
The Effect of Photoresist on Line Width Roughness (LWR) 6:33
This presentation is designed for chemists and engineers involved in microlithography in the semiconductor manufacturing industry who would like to learn about the impact of photoresists on line width roughness (LWR) or line edge roughness (LER). In this presentation, Dr. Xu will explain why LWR/LER decreases at a high concentration of base (a.k.a. quencher) and photoacid generator (PAG). Dr. Xu will also demonstrate the LWR improvements that can be made through PAG uniformly distributing in the film and polymer with controllable swelling and molecular weight.
Dr. Cheng Bai Xu, Ph.D.
Global R&D Director, Litho Technologies
Dow Electronic Materials
Introduction to Bottom Anti-Reflection Coating (BARC) Technology 7:20
In this video, Dr. James Thackeray provides an introduction to Bottom Anti-Reflection Coating (BARC). Dr. Thackeray will cover the basic function of BARCs in the semiconductor fabrication process, the basic chemistry of the BARC, and he will also show some illustrative examples of common reflection problems that a BARC can solve for the lithographic process engineer.
Dr. Jim Thackeray, Ph.D.
Dow Fellow
Dow Electronic Materials
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