Dow Electronic Materials
INTERVIA™ 9000 Cu Plating Chemistry
INTERVIA™ 9000 is a next-generation Cu plating chemistry designed for today’s advanced metallization processes used in advanced wafer-level, 2.5D and 3D-IC packaging technologies. The chemistry’s advanced additive formulation was designed to address a wide process window. It is suitable for today’s fan-out wafer-level packaging and 3D stacking Cu plating applications, as well as conventional wafer-level chip-scale packages.
Table 1: Advantages of INTERVIA™ 9000 Cu plating chemistry
|Typically <5% WID||Excellent Thickness Uniformity|
|Up to 16 ASD or 3.5 µm/min.||High Plating Speed|
|-5% (dishing) ~ +10% (doming) TIR||Flat ~ Slightly Domed Pillar Shape|
|Less than 20 ppm impurity||Pure Copper Deposition|
|1 ~ 16 ASD||Versatile Applications: RDL, Micro Pillar, STD Pillar, Huge Pillar|
|Perfect Combination with SOLDERON™ BP Tin-Silver and/or NIKAL™ BP Nickel Chemistry||One-Stop Solution for Metallization|
During high-speed plating, INTERVIA™ 9000 Cu demonstrates excellent WID uniformity at ~<5%, and pure deposition. The strength of the chemistry is its balance. INTERVIA™ 9000 Cu provides a much-improved pillar shape, which has smooth morphology and is highly tunable from domed to flat to slightly dished. It’s also highly compatible with Dow SOLDERON™ BP TS 6000 Tin-Silver for capping Cu pillars, as well as NIKAL™ BP for under-bump or barrier metallization. The combination of this compatibility with the high purity of INTERVIA™ 9000 Cu provides for void-free performance after reflow (Figures 1-2).
INTERVIA 9000 Cu can be used for multiple applications and process steps, such as Redistribution (Figure 3), in one plating tool without changing the plating bath, making it an economical choice. Additionally, the purity of the formulation reduces manufacturing costs by eliminating the nickel barrier between the copper and solder elements required by other plating approaches to control topography and eliminate defects.
Figure 1: Consistent WID% and dishing shape maintained for 50 µm pillars with TS6000 chemistry during 100Ahr/L aging with void-free performance.
Figure 2: No microvoids present after 1X and 5X reflows with low doping (less than 10ppm C, O, S, N, Cl).
Figure 3: Redistribution layer (RDL) performance at 7 ASD.