Dow Electronic Materials
AccuDEP Cobalt Precursor

AccuDEP™ Cobalt (Et) Precursor is ideal for creating films within semiconductor structures that require precise deposits of cobalt-based materials, such as metal contact and electrode applications.

Advantages

  • Cobalt silicides comprising contact metal and electrode application
  • High vapor pressure liquid source (500 mTorr at 100˚C), with high thermal stability
  • Films with low carbon incorporation (<1%), and excellent step coverage for high aspect ratio trenches (40:1)