Dow Electronic Materials
AccuDEP Cobalt Precursor
AccuDEP™ Cobalt (Et) Precursor is ideal for creating films within semiconductor structures that require precise deposits of cobalt-based materials, such as metal contact and electrode applications.
- Cobalt silicides comprising contact metal and electrode application
- High vapor pressure liquid source (500 mTorr at 100˚C), with high thermal stability
- Films with low carbon incorporation (<1%), and excellent step coverage for high aspect ratio trenches (40:1)