AccuDEP Lanthanum Precursor
The AccuDEP™ Lanthanum (Fa) Precursor from Dow Electronic Materials is ideal for creating films within semiconductor structures that require precise deposition of lanthanum-based materials, including capacitor and gate dielectrics in memory and logic devices. This precursor is suitable for generating high-k films comprised of lanthanum oxide.
Advantages
- Most volatile Lanthanum source currently available – Vapor Pressure: 57 mTorr @ 100˚C
- Very high thermal stability at deposition temperature (>300˚C)
- Highly reactive toward H2O, O3 and H2O2
- Demonstrated customer qualified deposition
- Films with low carbon incorporation (<1%), and excellent step coverage for high aspect ratio trenches (40:1)