AccuDEP Manganese Precursor

AccuDEP™ Manganese (Bu) Precursor is ideal for creating films within semiconductor structures that require precise deposits of manganese-based materials, including copper barrier and capping layers.

Advantages

  • Excellent zero-thickness manganese silicate barrier layer and manganese capping layer for copper
  • Liquid at operating temperatures (> 60˚C) with high thermal stability
  • Excellent step coverage for high aspect ratio (40:1) trenches over a wide range of temperatures (130–300˚C)