AccuDEP Nickel Precursor
The AccuDEP™ Nickel Precursor from Dow Electronic Materials is ideal for creating films within semiconductor structures that require precise deposits of nickel-based materials, including electrodes, gates and metal contacts in memory and logic devices. AccuDEP Nickel Precursor can also be used in strategic solvents to achieve a higher concentration and enhanced delivery when using the direct liquid injection (DLI) technique.
Advantages
- Liquid at operating temperature
- Low deposition temperature (160–200°C)
- Suitable for both thermal CVD/ALD and plasma ALD processes to generate nickel silicide, nickel sulfide/oxide or pure metallic nickel
- Excellent step coverage over high aspect ratio trench (50:1)
- High growth rate (up to 5 nm/min) *
- Low carbon incorporation (<1%) and ready salicidation of Ni film
Step coverage of AccuDEP™ Nickel Precursor in 50:1 Trench
Excellent step coverage at a trench with aspect ratio 50:1