Dow Electronic Materials
Thermally Cross-Linking Bottom Anti-Reflectant - AR™ 254
Product Category: Below Resists: oBARC-KrF Implant BARC
AR™ 254 is an organic, thermally cross-linking bottom anti-reflectant for 248 nm (KrF) photoresist. It has excellent gap filling and planarizing properties that are key requirements for advanced semiconductor devices having FinFET structures. AR 254 has a high etch rate to reduce substrate damage and optimal optical parameters to minimize reflectance.
Features
- Good gap fill property at extremely narrow trench
- Excellent planarizing property to minimize thickness gap on various pattern density
- High etch rate to minimize etch bias and substrate damage
- Optimal n & k values
Benefits
- Excellent resist CD and profile control on topography
- Reduces substrate damage due to high etch rate
- Increases process margin
Polymer | Etch Rate O2/Ar |
---|---|
KrF resist | 0.45 |
Conventional KrF BARC | 0.60 |
AR™ 254 | 1.31 |
Focus offset
+0.15sum
+0.05um Best focus
-0.05um