Dow Electronic Materials
ArF Dry L/S Resist

Product Category: Resists

Positive tone 193 nm dry resist has been optimized for trench and line and space applications through pitch.


  • 90 nm 1:1 line and space
  • 90 nm ISO line


  • Very large PW at various pitches
  • Excellent profile
  • Good ID bias
  • Good etch resistance
Image of ArF Dry Resist

1a: 90 nm L/90 nm S

Image of ArF Dry Resist

90 nm ISO L

Figure 1: 170 nm on AR™ 26N/AR™ 4124 Fast Etch, 0.93NA, Ann. s: 0.72/0.49 , PSM mask, SB/PEB=125°C/110°C, PS=27.4mJ