The International Conference on Planarization/CMP Technology (ICPT) provides an international forum for academic researchers, industrial practitioners and engineers from around the world for the exchange of information on state-of-the-art research in Chemical Mechanical Planarization (CMP) technology.
Dow is proud to be a sponsor and participant in this leading-edge forum. This year, we will be giving three presentations during the conference, which takes place in Chandler, Ariz. Sept. 30 to Oct. 2.
Advanced Cu Barrier CMP Slurries: ACuPLANE™ 7000 Platform
Wednesday, September 30 at 4:50 pm, Poster Session 1
Shawn Ware, Matt VanHanehem, Kevin Jacobs, Todd Buley, Jamie Cohen
This poster presentation provides a detailed overview of the differentiated slurries offered by the advanced copper barrier ACuPLANE™ 7000 series. It will also share:
- A discussion of the implementation of response modeling techniques to demonstrate the range of performance across each layer of interest that can be achieved across the additive and abrasive concentration ranges
- How mapping of the performance space, both in terms of removal rates and defectivity performance, is valuable for tunability of these slurries depending on the integration scheme
- A demonstration of the extension of this platform towards cobalt liner layers
Achieving Atomic Scale Control of CMP Planarization
Thursday, October 1 at 8:25 am
Lee Cook
Film thickness control required for high yield manufacturing of sub-10nm integrated circuits will require film thickness control in the 10s of Angstrom range. In order to achieve this objective, all possible contributions to variation in the planarization process must be examined and controlled. This presentation will review two significant contributions to variation: CMP-induced nanotexture and chemical effects in self-stopping CMP processes.
Conditioner Characterization and Implementation for Impacts of Diamond on CMP Pad Texture and Performance
Friday, October 2 at 9:15 am
Zhan Liu, John McCormick, Todd Buley
In this presentation, a conditioning disk characterization method will be demonstrated. Differences in diamond characteristics across different types of disks, and differences between batches of the same type of disk were observed and quantified. Diamond wear was also successfully quantified by histogram shifts. A direct linkage of diamond wear over time to the pad wear rate decay, texture change and unstable polishing performance (e.g. removal rate) is established and quantified. This characterization can provide an insight into diamond characteristics for pad texture prediction. The combined characterization capabilities in pad and surface texture, conditioner, and process provide in-depth understanding of the CMP process, to provide scientific recommendations for CMP applications for improved CMP consumables.
We’ll also be onsite at the show at Table #25. We hope you’ll come by to visit and learn more about how Dow is enabling the next generation of CMP processes.